From crystal bands and device electrostatics to quantum confinement, material response, plasmons and THz nanoelectronics.
This volume reuses the circuit and electromagnetic foundations to derive nanoscale behaviour from solid-state, semiconductor, quantum and many-body physics. It explicitly reconnects Maxwell/material response to conductivity, permittivity, Drude/Lorentz models, dielectric response, RPA, plasmons and THz devices.
Courses are arranged as a reading sequence. Available material opens normally; planned entries remain visible so the intellectual structure is explicit before the library is complete.
Lattices, reciprocal space, Bloch states and the physical origin of allowed/forbidden energy bands.
Occupation statistics, density of states in 3D/2D/1D, effective mass and the bridge from band structure to carrier populations.
Electrons and holes, mobility, conductivity, drift-diffusion, continuity and the microscopic meaning of transport parameters.
Charge–potential coupling, depletion/accumulation, Debye screening, dielectric interfaces, surface states and self-consistent electrostatics foundations.
Built-in potentials, depletion regions, junction capacitance, Schottky barriers and MOS capacitor regimes.
Device operation derived from electrostatics and transport, with explicit links between physical models and compact circuit models.
Confinement, boundary conditions, subbands, envelope functions, density of states and realistic semiconductor nanostructure examples.
Band offsets, charge transfer, self-consistent electrostatics, surface states and numerical quantum-well population calculations.
2D density of states, Hall effect, mobility, scattering, magnetotransport and transport diagnostics in semiconductor heterostructures.
Dirac bands, carrier density, quantum capacitance, transport, substrate/interface effects and practical characterization of 2D materials.
Scattering, transmission, conductance quantization, Green-function methods and the bridge toward NEGF-style device modelling.
Complex conductivity, dielectric function, polarization, dispersion and loss as the bridge from Maxwell equations to electronic materials.
Response functions, causality, screening and the language needed before many-body polarization calculations.
Polarization functions, dielectric zeros, collective modes, Landau damping and the assumptions behind semiclassical and quantum plasmon models.
2D carriers, grating coupling, plasmon resonances, detector mechanisms and the bridge from analytical models to reproducible THz experiments.
Lithography, deposition, etching, contacts, ALD, SEM/AFM/Raman, Hall/TLM and the evidence needed to connect a fabricated device to its model.